FDFMA2P853 |
RFQ for FDFMA2P853 Required Field |
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| Technical/Catalog Information | FDFMA2P853 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 3A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 435pF @ 10V |
| Power - Max | 700mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 6nC @ 4.5V |
| Package / Case | MicroFET-6 |
| FET Feature | Diode (Isolated) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDFMA2P853 FDFMA2P853 FDFMA2P853CT ND FDFMA2P853CTND FDFMA2P853CT |
| Product | Manufacturers | Pack | D/C |
| FDFMA2P853 | - | - | - |
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.
Features |
| MOSFET:· -3.0 A, -20V. RDS(ON) = 120 mΩ @ VGS = -4.5 VRDS(ON) = 160 mΩ @ VGS = -2.5 VRDS(ON) = 240 mΩ @ VGS = -1.8 V· Low Profile - 0.8 mm maximun - in the new packageMicroFET 2x2 mmSchottky:· VF < 0.46 V @ 500 mA |
|
Symbol |
Parameter |
Ratings |
Units | |
| VDSS VGSS ID VRRM IO PD TJ, TSTG |
MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current -Continuous -Pulsed Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current Power dissipation for Single Operation Power dissipation for Single Operation Operating and Storage Junction Temperature Range |
(Note 1a) (Note 1a) (Note 1a) (Note 1b) |
-20 ±8 -2.2 -6 20 1 1.4 0.7 -55 to +150 |
V V A V A W oC |
